Conventional CMOS image sensors with a linear transfer characteristic only have a limited dynamic range (DR) of about 60–70 dB. To extend the dynamic range considerably, the already successfully demonstrated concept of a linear self-reset pixel was employed in this work. With the self-reset concept the limit of the maximum analyzable photo generated charge (Qmax) during the exposure time is extended to a multiple of the saturation charge of the photo diode (Qsat) by asynchronous self-resets of the photo diode. Additionally, the remaining charge at the end of the exposure time is evaluated to increase the resolution of the opto-electronic conversion. Thus we achieved pixels with a DR of more than 120 dB combined with an improved low light sensitivity using a pinned photodiode.
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