The native HDR pixel concept based on a parallel electron and hole collection for, respectively, a low signal level and a high signal level is particularly well-suited for this performance challenge. The theoretical performance of this pixel is modeled and compared to alternative HDR pixel architectures. This concept is proven with the fabrication of a 3.2 μm pixel in a back-side illuminated (BSI) process including capacitive deep trench isolation (CDTI). The electron-based image uses a standard 4T architecture with a pinned diode and provides state-of-the-art low-light performance, which is not altered by the pixel modifications introduced for the hole collection. The hole-based image reaches 750 kh+ linear storage capability thanks to a 73 fF CDTI capacitor. Both images are taken from the same integration window, so the HDR reconstruction is not only immune to the flicker issue but also to motion artifacts.

http://www.mdpi.com/1424-8220/18/1/305